Datasheet | RSS100N03FU6TB |
File Size | 59.93 KB |
Total Pages | 4 |
Manufacturer | Rohm Semiconductor |
Website | https://www.rohm.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | RSS100N03FU6TB, RSS100N03TB |
Description | MOSFET N-CH 30V 10A 8SOIC, MOSFET N-CH 30V 10A 8-SOIC |
RSS100N03FU6TB - Rohm Semiconductor
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Rohm Semiconductor Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 13mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V Vgs (Max) 20V Input Capacitance (Ciss) (Max) @ Vds 1070pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Package / Case 8-SOIC (0.154", 3.90mm Width) |
Rohm Semiconductor Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 13mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V Vgs (Max) 20V Input Capacitance (Ciss) (Max) @ Vds 1070pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Package / Case 8-SOIC (0.154", 3.90mm Width) |