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| Datasheet | RZY200P01TL |
| File Size | 284.82 KB |
| Total Pages | 1 |
| Manufacturer | Rohm Semiconductor |
| Website | https://www.rohm.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RZY200P01TL |
| Description | MOSFET P-CH 12V 20A TCPT3 |
RZY200P01TL - Rohm Semiconductor
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RZY200P01TL | Rohm Semiconductor | MOSFET P-CH 12V 20A TCPT3 | 356 More on Order |
URL Link
www.oemstron.com/datasheet/RZY200P01TL
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Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 20A (Ta) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 20W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TCPT3 Package / Case 3-SMD, Flat Leads |