Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | S1FLK-GS08 |
| File Size | 89.66 KB |
| Total Pages | 5 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 12 part numbers |
| Associated Parts | S1FLK-GS08, S1FLK-GS18, S1FLG-GS08, S1FLJ-GS18, S1FLG-GS18, S1FLD-GS18, S1FLB-GS18, S1FLD-GS08, S1FLJ-GS08, S1FLB-GS08, S1FLM-GS08, S1FLM-GS18 |
| Description | DIODE GP 800V 700MA DO219AB, DIODE GEN PURP 800V 1A DO219AB, DIODE GP 400V 700MA DO219AB, DIODE GEN PURP 600V 1A DO219AB, DIODE GP 400V 700MA DO219AB |
S1FLK-GS08 - Vishay Semiconductor Diodes Division
The Products You May Be Interested In
 |
S1FLK-GS08 | Vishay Semiconductor Diodes Division | DIODE GP 800V 700MA DO219AB | 346 More on Order |
 |
S1FLK-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 1A DO219AB | 493 More on Order |
 |
S1FLG-GS08 | Vishay Semiconductor Diodes Division | DIODE GP 400V 700MA DO219AB | 488 More on Order |
 |
S1FLJ-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO219AB | 297 More on Order |
 |
S1FLG-GS18 | Vishay Semiconductor Diodes Division | DIODE GP 400V 700MA DO219AB | 111 More on Order |
 |
S1FLD-GS18 | Vishay Semiconductor Diodes Division | DIODE GP 200V 700MA DO219AB | 375 More on Order |
 |
S1FLB-GS18 | Vishay Semiconductor Diodes Division | DIODE GP 100V 700MA DO219AB | 202 More on Order |
 |
S1FLD-GS08 | Vishay Semiconductor Diodes Division | DIODE GP 200V 700MA DO219AB | 471 More on Order |
 |
S1FLJ-GS08 | Vishay Semiconductor Diodes Division | DIODE GP 600V 700MA DO219AB | 452 More on Order |
 |
S1FLB-GS08 | Vishay Semiconductor Diodes Division | DIODE GP 100V 700MA DO219AB | 3667 More on Order |
 |
S1FLM-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 700MA DO219AB | 96957 More on Order |
 |
S1FLM-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 1A DO219AB | 91877 More on Order |
URL Link
|
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 800V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 800V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 400V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 600V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 400V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 200V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 100V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 200V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 600V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 100V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 1000V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 1000V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |