Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SCH1331-TL-W |
| File Size | 658.92 KB |
| Total Pages | 5 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SCH1331-TL-W, SCH1331-TL-H |
| Description | MOSFET P-CH 12V 3A SCH6, MOSFET P-CH 12V 3A SCH6 |
SCH1331-TL-W - ON Semiconductor
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URL Link
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 84mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 405pF @ 6V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-563/SCH6 Package / Case SOT-563, SOT-666 |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 84mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 405pF @ 6V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-SCH Package / Case SOT-563, SOT-666 |