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| Datasheet | SCT10N120 |
| File Size | 232.26 KB |
| Total Pages | 13 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SCT10N120 |
| Description | MOSFET N-CH 1.2KV TO247-3 |
SCT10N120 - STMicroelectronics
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SCT10N120 | STMicroelectronics | MOSFET N-CH 1.2KV TO247-3 | 519 More on Order |
URL Link
www.oemstron.com/datasheet/SCT10N120
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Manufacturer STMicroelectronics Series - FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 690mOhm @ 6A, 20V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 20V Vgs (Max) +25V, -10V Input Capacitance (Ciss) (Max) @ Vds 290pF @ 400V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 200°C (TJ) Mounting Type Through Hole Supplier Device Package HiP247™ Package / Case TO-247-3 |