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| Datasheet | SCT2120AFC |
| File Size | 829.68 KB |
| Total Pages | 14 |
| Manufacturer | Rohm Semiconductor |
| Website | https://www.rohm.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SCT2120AFC |
| Description | MOSFET N-CH 650V 29A TO-220AB |
SCT2120AFC - Rohm Semiconductor
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SCT2120AFC | Rohm Semiconductor | MOSFET N-CH 650V 29A TO-220AB | 1464 More on Order |
URL Link
www.oemstron.com/datasheet/SCT2120AFC
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 29A (Tc) Drive Voltage (Max Rds On, Min Rds On) 18V Rds On (Max) @ Id, Vgs 156mOhm @ 10A, 18V Vgs(th) (Max) @ Id 4V @ 3.3mA Gate Charge (Qg) (Max) @ Vgs 61nC @ 18V Vgs (Max) +22V, -6V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 500V FET Feature - Power Dissipation (Max) 165W (Tc) Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |