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| Datasheet | SCT2160KEC |
| File Size | 775.31 KB |
| Total Pages | 14 |
| Manufacturer | Rohm Semiconductor |
| Website | https://www.rohm.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SCT2160KEC |
| Description | MOSFET N-CH 1200V 22A TO-247 |
SCT2160KEC - Rohm Semiconductor
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SCT2160KEC | Rohm Semiconductor | MOSFET N-CH 1200V 22A TO-247 | 6765 More on Order |
URL Link
www.oemstron.com/datasheet/SCT2160KEC
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 18V Rds On (Max) @ Id, Vgs 208mOhm @ 7A, 18V Vgs(th) (Max) @ Id 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 62nC @ 18V Vgs (Max) +22V, -6V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 800V FET Feature - Power Dissipation (Max) 165W (Tc) Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |