Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

SCT2280KEC Datasheet

SCT2280KEC Cover
DatasheetSCT2280KEC
File Size780.84 KB
Total Pages14
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts SCT2280KEC
Description MOSFET N-CH 1200V 14A TO-247

SCT2280KEC - Rohm Semiconductor

SCT2280KEC Datasheet Page 1
SCT2280KEC Datasheet Page 2
SCT2280KEC Datasheet Page 3
SCT2280KEC Datasheet Page 4
SCT2280KEC Datasheet Page 5
SCT2280KEC Datasheet Page 6
SCT2280KEC Datasheet Page 7
SCT2280KEC Datasheet Page 8
SCT2280KEC Datasheet Page 9
SCT2280KEC Datasheet Page 10
SCT2280KEC Datasheet Page 11
SCT2280KEC Datasheet Page 12
SCT2280KEC Datasheet Page 13
SCT2280KEC Datasheet Page 14

The Products You May Be Interested In

SCT2280KEC SCT2280KEC Rohm Semiconductor MOSFET N-CH 1200V 14A TO-247 3118

More on Order

URL Link

SCT2280KEC

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Rds On (Max) @ Id, Vgs

364mOhm @ 4A, 18V

Vgs(th) (Max) @ Id

4V @ 1.4mA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 18V

Vgs (Max)

+22V, -6V

Input Capacitance (Ciss) (Max) @ Vds

667pF @ 800V

FET Feature

-

Power Dissipation (Max)

108W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3