Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SCTH90N65G2V-7 |
| File Size | 612.15 KB |
| Total Pages | 14 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SCTH90N65G2V-7 |
| Description | SILICON CARBIDE POWER MOSFET 650 |
SCTH90N65G2V-7 - STMicroelectronics
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URL Link
www.oemstron.com/datasheet/SCTH90N65G2V-7
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Manufacturer STMicroelectronics Series - FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 18V Rds On (Max) @ Id, Vgs 26mOhm @ 50A, 18V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 157nC @ 18V Vgs (Max) +22V, -10V Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 400V FET Feature - Power Dissipation (Max) 330W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package H2PAK-7 Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |