Datasheet | SDP10S30 |
File Size | 615.31 KB |
Total Pages | 9 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | SDP10S30, SDT10S30 |
Description | DIODE SCHOTTKY 300V 10A TO220-3, DIODE SCHOTTKY 300V 10A TO220-2 |
SDP10S30 - Infineon Technologies
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Infineon Technologies Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 300V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 10A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 200µA @ 300V Capacitance @ Vr, F 600pF @ 0V, 1MHz Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package PG-TO220-3 Operating Temperature - Junction -55°C ~ 175°C |
Infineon Technologies Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 300V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 10A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 200µA @ 300V Capacitance @ Vr, F 600pF @ 0V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package PG-TO220-2-2 Operating Temperature - Junction -55°C ~ 175°C |