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| Datasheet | SE30PAJHM3/I |
| File Size | 4,498.7 KB |
| Total Pages | 70 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SE30PAJHM3/I, SE50PAJHM3/I |
| Description | DIODE GEN PURP 600V 3A DO221BC, DIODE GEN PURP 600V 5A DO221BC |
SE30PAJHM3/I - Vishay Semiconductor Diodes Division
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Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 1.16V @ 3A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.3µs Current - Reverse Leakage @ Vr 5µA @ 600V Capacitance @ Vr, F 13pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-221BC, SMA Flat Leads Exposed Pad Supplier Device Package DO-221BC (SMPA) Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 5A Voltage - Forward (Vf) (Max) @ If 1.16V @ 5A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 2µs Current - Reverse Leakage @ Vr 10µA @ 600V Capacitance @ Vr, F 32pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-221BC, SMA Flat Leads Exposed Pad Supplier Device Package DO-221BC (SMPA) Operating Temperature - Junction -55°C ~ 175°C |