Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SFT1431-W |
| File Size | 356.45 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | SFT1431-W, SFT1431-TL-W, SFT1431-E, SFT1431-TL-E |
| Description | MOSFET N-CH 35V 11A TP, MOSFET N-CH 35V 11A TP-FA, MOSFET N-CH 35V 11A TP, MOSFET N-CH 35V 11A TP-FA |
SFT1431-W - ON Semiconductor
The Products You May Be Interested In
 |
SFT1431-W | ON Semiconductor | MOSFET N-CH 35V 11A TP | 373 More on Order |
 |
SFT1431-TL-W | ON Semiconductor | MOSFET N-CH 35V 11A TP-FA | 388 More on Order |
 |
SFT1431-E | ON Semiconductor | MOSFET N-CH 35V 11A TP | 213 More on Order |
 |
SFT1431-TL-E | ON Semiconductor | MOSFET N-CH 35V 11A TP-FA | 422 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 35V Current - Continuous Drain (Id) @ 25°C 11A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 25mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs 17.3nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 960pF @ 20V FET Feature - Power Dissipation (Max) 1W (Ta), 15W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package IPAK/TP Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 35V Current - Continuous Drain (Id) @ 25°C 11A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 25mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs 17.3nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 960pF @ 20V FET Feature - Power Dissipation (Max) 1W (Ta), 15W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK/TP-FA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 35V Current - Continuous Drain (Id) @ 25°C 11A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 25mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 17.3nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 960pF @ 20V FET Feature - Power Dissipation (Max) 1W (Ta), 15W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TP Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 35V Current - Continuous Drain (Id) @ 25°C 11A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 25mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 17.3nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 960pF @ 20V FET Feature - Power Dissipation (Max) 1W (Ta), 15W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TP-FA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |