Datasheet | SH8M11TB1 |
File Size | 617.32 KB |
Total Pages | 11 |
Manufacturer | Rohm Semiconductor |
Website | https://www.rohm.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | SH8M11TB1 |
Description | MOSFET N/P-CH 30V 3.5A 8SOP |
SH8M11TB1 - Rohm Semiconductor
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SH8M11TB1 | Rohm Semiconductor | MOSFET N/P-CH 30V 3.5A 8SOP | 146 More on Order |
URL Link
www.oemstron.com/datasheet/SH8M11TB1
Rohm Semiconductor Manufacturer Rohm Semiconductor Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3.5A Rds On (Max) @ Id, Vgs 98mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 1.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 85pF @ 10V Power - Max 2W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOP |