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SI1023X-T1-E3 Datasheet

SI1023X-T1-E3 Cover
DatasheetSI1023X-T1-E3
File Size140.72 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI1023X-T1-E3, SI1023X-T1-GE3
Description MOSFET 2P-CH 20V 0.37A SOT563F, MOSFET 2P-CH 20V 0.37A SC89-6

SI1023X-T1-E3 - Vishay Siliconix

SI1023X-T1-E3 Datasheet Page 1
SI1023X-T1-E3 Datasheet Page 2
SI1023X-T1-E3 Datasheet Page 3
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SI1023X-T1-E3 Datasheet Page 6
SI1023X-T1-E3 Datasheet Page 7

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SI1023X-T1-E3 SI1023X-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 0.37A SOT563F 480

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SI1023X-T1-GE3 SI1023X-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 0.37A SC89-6 4018

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URL Link

SI1023X-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

370mA

Rds On (Max) @ Id, Vgs

1.2Ohm @ 350mA, 4.5V

Vgs(th) (Max) @ Id

450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

1.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

250mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SC-89-6

SI1023X-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

370mA

Rds On (Max) @ Id, Vgs

1.2Ohm @ 350mA, 4.5V

Vgs(th) (Max) @ Id

450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

1.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

250mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SC-89-6