Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI1024X-T1-E3 |
| File Size | 167.16 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI1024X-T1-E3, SI1024X-T1-GE3 |
| Description | MOSFET 2N-CH 20V 0.485A SOT563F, MOSFET 2N-CH 20V 0.485A SC89-6 |
SI1024X-T1-E3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI1024X-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 20V 0.485A SOT563F | 176 More on Order |
 |
SI1024X-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 20V 0.485A SC89-6 | 23068 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 485mA Rds On (Max) @ Id, Vgs 700mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 250mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SC-89-6 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 485mA Rds On (Max) @ Id, Vgs 700mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 250mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SC-89-6 |