Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI1026X-T1-E3 |
| File Size | 143.85 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI1026X-T1-E3, SI1026X-T1-GE3 |
| Description | MOSFET 2N-CH 60V 0.305A SOT563F, MOSFET 2N-CH 60V 0.305A SC89-6 |
SI1026X-T1-E3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI1026X-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 60V 0.305A SOT563F | 393 More on Order |
 |
SI1026X-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 60V 0.305A SC89-6 | 200230 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 305mA Rds On (Max) @ Id, Vgs 1.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 30pF @ 25V Power - Max 250mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SC-89-6 |
Manufacturer Vishay Siliconix Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 305mA Rds On (Max) @ Id, Vgs 1.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 30pF @ 25V Power - Max 250mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SC-89-6 |