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| Datasheet | SI1029X-T1-E3 |
| File Size | 160.7 KB |
| Total Pages | 10 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI1029X-T1-E3, SI1029X-T1-GE3 |
| Description | MOSFET N/P-CH 60V SOT563F, MOSFET N/P-CH 60V SC89-6 |
SI1029X-T1-E3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 305mA, 190mA Rds On (Max) @ Id, Vgs 1.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 30pF @ 25V Power - Max 250mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SC-89-6 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 305mA, 190mA Rds On (Max) @ Id, Vgs 1.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 30pF @ 25V Power - Max 250mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SC-89-6 |