Datasheet | SI1034X-T1-E3 |
File Size | 141.7 KB |
Total Pages | 7 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | SI1034X-T1-E3, SI1034X-T1-GE3 |
Description | MOSFET 2N-CH 20V 0.18A SOT563F, MOSFET 2N-CH 20V 0.18A SC89-6 |
SI1034X-T1-E3 - Vishay Siliconix
The Products You May Be Interested In
SI1034X-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 20V 0.18A SOT563F | 401 More on Order |
|
SI1034X-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 20V 0.18A SC89-6 | 25403 More on Order |
URL Link
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 180mA Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 250mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SC-89-6 |
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 180mA Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 250mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SC-89-6 |