![SI1404BDH-T1-E3 Cover](http://media.oemstron.com/oemstron/datasheet/sm/si1404bdh-t1-e3-0001.jpg)
Datasheet | SI1404BDH-T1-E3 |
File Size | 105.35 KB |
Total Pages | 7 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | SI1404BDH-T1-E3, SI1404BDH-T1-GE3 |
Description | MOSFET N-CH 30V 1.9A SOT363, MOSFET N-CH 30V 1.9A SOT363 |
SI1404BDH-T1-E3 - Vishay Siliconix
![SI1404BDH-T1-E3 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/si1404bdh-t1-e3-0001.jpg)
![SI1404BDH-T1-E3 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/si1404bdh-t1-e3-0002.jpg)
![SI1404BDH-T1-E3 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/si1404bdh-t1-e3-0003.jpg)
![SI1404BDH-T1-E3 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/si1404bdh-t1-e3-0004.jpg)
![SI1404BDH-T1-E3 Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/si1404bdh-t1-e3-0005.jpg)
![SI1404BDH-T1-E3 Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/si1404bdh-t1-e3-0006.jpg)
![SI1404BDH-T1-E3 Datasheet Page 7](http://media.oemstron.com/oemstron/datasheet/sm/si1404bdh-t1-e3-0007.jpg)
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 1.9A (Ta), 2.37A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 238mOhm @ 1.9A, 4.5V Vgs(th) (Max) @ Id 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 100pF @ 15V FET Feature - Power Dissipation (Max) 1.32W (Ta), 2.28W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-70-6 (SOT-363) Package / Case 6-TSSOP, SC-88, SOT-363 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 1.9A (Ta), 2.37A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 238mOhm @ 1.9A, 4.5V Vgs(th) (Max) @ Id 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 100pF @ 15V FET Feature - Power Dissipation (Max) 1.32W (Ta), 2.28W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-70-6 (SOT-363) Package / Case 6-TSSOP, SC-88, SOT-363 |