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| Datasheet | SI1431DH-T1-GE3 |
| File Size | 99.52 KB |
| Total Pages | 6 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI1431DH-T1-GE3, SI1431DH-T1-E3 |
| Description | MOSFET P-CH 30V 1.7A SOT363, MOSFET P-CH 30V 1.7A SOT363 |
SI1431DH-T1-GE3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 200mOhm @ 2A, 10V Vgs(th) (Max) @ Id 3V @ 100µA Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 950mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-70-6 (SOT-363) Package / Case 6-TSSOP, SC-88, SOT-363 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 200mOhm @ 2A, 10V Vgs(th) (Max) @ Id 3V @ 100µA Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 950mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-70-6 (SOT-363) Package / Case 6-TSSOP, SC-88, SOT-363 |