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SI1470DH-T1-E3 Datasheet

SI1470DH-T1-E3 Cover
DatasheetSI1470DH-T1-E3
File Size122.69 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI1470DH-T1-E3
Description MOSFET N-CH 30V 5.1A SC70-6

SI1470DH-T1-E3 - Vishay Siliconix

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SI1470DH-T1-E3 SI1470DH-T1-E3 Vishay Siliconix MOSFET N-CH 30V 5.1A SC70-6 461

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URL Link

SI1470DH-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

66mOhm @ 3.8A, 4.5V

Vgs(th) (Max) @ Id

1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

510pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta), 2.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-6 (SOT-363)

Package / Case

6-TSSOP, SC-88, SOT-363