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| Datasheet | SI1912EDH-T1-E3 |
| File Size | 115.48 KB |
| Total Pages | 6 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI1912EDH-T1-E3 |
| Description | MOSFET 2N-CH 20V 1.13A SC70-6 |
SI1912EDH-T1-E3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SI1912EDH-T1-E3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.13A Rds On (Max) @ Id, Vgs 280mOhm @ 1.13A, 4.5V Vgs(th) (Max) @ Id 450mV @ 100µA (Min) Gate Charge (Qg) (Max) @ Vgs 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 570mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-70-6 (SOT-363) |