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| Datasheet | SI1922EDH-T1-GE3 |
| File Size | 261.21 KB |
| Total Pages | 12 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI1922EDH-T1-GE3 |
| Description | MOSFET 2N-CH 20V 1.3A SOT-363 |
SI1922EDH-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SI1922EDH-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.3A Rds On (Max) @ Id, Vgs 198mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.25W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-70-6 (SOT-363) |