Datasheet | SI1926DL-T1-GE3 |
File Size | 248.57 KB |
Total Pages | 11 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | SI1926DL-T1-GE3, SI1926DL-T1-E3 |
Description | MOSFET 2N-CH 60V 0.37A SOT363, MOSFET 2N-CH 60V 0.37A SC-70-6 |
SI1926DL-T1-GE3 - Vishay Siliconix
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SI1926DL-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 60V 0.37A SOT363 | 381 More on Order |
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SI1926DL-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 60V 0.37A SC-70-6 | 40066 More on Order |
URL Link
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 370mA Rds On (Max) @ Id, Vgs 1.4Ohm @ 340mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 18.5pF @ 30V Power - Max 510mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-70-6 (SOT-363) |
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 370mA Rds On (Max) @ Id, Vgs 1.4Ohm @ 340mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 18.5pF @ 30V Power - Max 510mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-70-6 (SOT-363) |