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| Datasheet | SI2305CDS-T1-GE3 |
| File Size | 227.87 KB |
| Total Pages | 10 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI2305CDS-T1-GE3 |
| Description | MOSFET P-CH 8V 5.8A SOT23-3 |
SI2305CDS-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SI2305CDS-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 35mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 960pF @ 4V FET Feature - Power Dissipation (Max) 960mW (Ta), 1.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |