Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI2309DS-T1-E3 |
| File Size | 86.23 KB |
| Total Pages | 5 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI2309DS-T1-E3 |
| Description | MOSFET P-CH 60V 1.25A SOT23-3 |
SI2309DS-T1-E3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI2309DS-T1-E3 | Vishay Siliconix | MOSFET P-CH 60V 1.25A SOT23-3 | 158 More on Order |
URL Link
www.oemstron.com/datasheet/SI2309DS-T1-E3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 340mOhm @ 1.25A, 10V Vgs(th) (Max) @ Id 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.25W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |