Datasheet | SI2336DS-T1-GE3 |
File Size | 211.41 KB |
Total Pages | 10 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | SI2336DS-T1-GE3 |
Description | MOSFET N-CH 30V 5.2A SOT-23 |
SI2336DS-T1-GE3 - Vishay Siliconix
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URL Link
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Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 42mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 560pF @ 15V FET Feature - Power Dissipation (Max) 1.25W (Ta), 1.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |