Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI2342DS-T1-GE3 |
| File Size | 246.04 KB |
| Total Pages | 10 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI2342DS-T1-GE3 |
| Description | MOSFET N-CH 8V 6A SOT-23 |
SI2342DS-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI2342DS-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V 6A SOT-23 | 95993 More on Order |
URL Link
www.oemstron.com/datasheet/SI2342DS-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 17mOhm @ 7.2A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.8nC @ 4.5V Vgs (Max) ±5V Input Capacitance (Ciss) (Max) @ Vds 1070pF @ 4V FET Feature - Power Dissipation (Max) 2.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |