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| Datasheet | SI3127DV-T1-GE3 |
| File Size | 246.53 KB |
| Total Pages | 11 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI3127DV-T1-GE3 |
| Description | MOSFET P-CHAN 60V TSOP6S |
SI3127DV-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SI3127DV-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 3.5A (Ta), 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 89mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 833pF @ 20V FET Feature - Power Dissipation (Max) 2W (Ta), 4.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6 |