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SI3440ADV-T1-GE3 Datasheet

SI3440ADV-T1-GE3 Cover
DatasheetSI3440ADV-T1-GE3
File Size270.98 KB
Total Pages11
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI3440ADV-T1-GE3
Description MOSFET N-CH 150V 2.2A 6TSOP

SI3440ADV-T1-GE3 - Vishay Siliconix

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SI3440ADV-T1-GE3 SI3440ADV-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 2.2A 6TSOP 465

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URL Link

SI3440ADV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

2.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

380mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

80pF @ 75V

FET Feature

-

Power Dissipation (Max)

3.6W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6