![SI3443DV Cover](http://media.oemstron.com/oemstron/datasheet/sm/si3443dv-0001.jpg)
Datasheet | SI3443DV |
File Size | 225.98 KB |
Total Pages | 5 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | SI3443DV |
Description | MOSFET P-CH 20V 4A SSOT-6 |
SI3443DV - ON Semiconductor
![SI3443DV Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/si3443dv-0001.jpg)
![SI3443DV Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/si3443dv-0002.jpg)
![SI3443DV Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/si3443dv-0003.jpg)
![SI3443DV Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/si3443dv-0004.jpg)
![SI3443DV Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/si3443dv-0005.jpg)
The Products You May Be Interested In
![]() |
SI3443DV | ON Semiconductor | MOSFET P-CH 20V 4A SSOT-6 | 15820 More on Order |
URL Link
www.oemstron.com/datasheet/SI3443DV
Manufacturer ON Semiconductor Series PowerTrench® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 65mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 640pF @ 10V FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SuperSOT™-6 Package / Case SOT-23-6 Thin, TSOT-23-6 |