Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI3460BDV-T1-GE3 |
| File Size | 218 KB |
| Total Pages | 11 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI3460BDV-T1-GE3, SI3460BDV-T1-E3 |
| Description | MOSFET N-CH 20V 8A 6-TSOP, MOSFET N-CH 20V 8A 6-TSOP |
SI3460BDV-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI3460BDV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 8A 6-TSOP | 100 More on Order |
 |
SI3460BDV-T1-E3 | Vishay Siliconix | MOSFET N-CH 20V 8A 6-TSOP | 98457 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 27mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 860pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta), 3.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 27mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 860pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta), 3.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6 |