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| Datasheet | SI3460DV-T1-GE3 |
| File Size | 181.5 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI3460DV-T1-GE3, SI3460DV-T1-E3 |
| Description | MOSFET N-CH 20V 5.1A 6TSOP, MOSFET N-CH 20V 5.1A 6TSOP |
SI3460DV-T1-GE3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 27mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id 450mV @ 1mA (Min) Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 27mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id 450mV @ 1mA (Min) Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6 |