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| Datasheet | SI3585CDV-T1-GE3 |
| File Size | 254.43 KB |
| Total Pages | 16 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI3585CDV-T1-GE3 |
| Description | MOSFET N/P-CH 20V 3.9A 6TSOP |
SI3585CDV-T1-GE3 - Vishay Siliconix
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SI3585CDV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 3.9A 6TSOP | 16604 More on Order |
URL Link
www.oemstron.com/datasheet/SI3585CDV-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.9A, 2.1A Rds On (Max) @ Id, Vgs 58mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 150pF @ 10V Power - Max 1.4W, 1.3W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package 6-TSOP |