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SI3993DV-T1-GE3 Datasheet

SI3993DV-T1-GE3 Cover
DatasheetSI3993DV-T1-GE3
File Size203.82 KB
Total Pages10
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI3993DV-T1-GE3, SI3993DV-T1-E3
Description MOSFET 2P-CH 30V 1.8A 6-TSOP, MOSFET 2P-CH 30V 1.8A 6-TSOP

SI3993DV-T1-GE3 - Vishay Siliconix

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SI3993DV-T1-GE3 SI3993DV-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 1.8A 6-TSOP 436

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SI3993DV-T1-E3 SI3993DV-T1-E3 Vishay Siliconix MOSFET 2P-CH 30V 1.8A 6-TSOP 483

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URL Link

SI3993DV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.8A

Rds On (Max) @ Id, Vgs

133mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

830mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

6-TSOP

SI3993DV-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.8A

Rds On (Max) @ Id, Vgs

133mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

830mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

6-TSOP