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| Datasheet | SI4178DY-T1-E3 |
| File Size | 186.57 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI4178DY-T1-E3 |
| Description | MOSFET N-CH 30V 12A 8SO |
SI4178DY-T1-E3 - Vishay Siliconix
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SI4178DY-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 12A 8SO | 306 More on Order |
URL Link
www.oemstron.com/datasheet/SI4178DY-T1-E3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 21mOhm @ 8.4A, 10V Vgs(th) (Max) @ Id 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 405pF @ 15V FET Feature - Power Dissipation (Max) 2.4W (Ta), 5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |