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| Datasheet | SI4200DY-T1-GE3 |
| File Size | 182.73 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI4200DY-T1-GE3 |
| Description | MOSFET 2N-CH 25V 8A 8SOIC |
SI4200DY-T1-GE3 - Vishay Siliconix
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SI4200DY-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 25V 8A 8SOIC | 3985 More on Order |
URL Link
www.oemstron.com/datasheet/SI4200DY-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 8A Rds On (Max) @ Id, Vgs 25mOhm @ 7.3A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 415pF @ 13V Power - Max 2.8W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |