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| Datasheet | SI4425FDY-T1-GE3 |
| File Size | 237.44 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI4425FDY-T1-GE3 |
| Description | MOSFET P-CH 30-V (D-S) SO-8 |
SI4425FDY-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SI4425FDY-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12.7A (Ta), 18.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V Vgs (Max) +16V, -20V Input Capacitance (Ciss) (Max) @ Vds 1620pF @ 15V FET Feature - Power Dissipation (Max) 2.3W (Ta), 4.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width) |