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| Datasheet | SI4501BDY-T1-GE3 |
| File Size | 206.32 KB |
| Total Pages | 14 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI4501BDY-T1-GE3 |
| Description | MOSFET N/P-CH 30V/8V 8SOIC |
SI4501BDY-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SI4501BDY-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel, Common Drain FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V, 8V Current - Continuous Drain (Id) @ 25°C 12A, 8A Rds On (Max) @ Id, Vgs 17mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 805pF @ 15V Power - Max 4.5W, 3.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |