Datasheet | SI4834CDY-T1-GE3 |
File Size | 208.43 KB |
Total Pages | 14 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | SI4834CDY-T1-GE3, SI4834CDY-T1-E3 |
Description | MOSFET 2N-CH 30V 8A 8SOIC, MOSFET 2N-CH 30V 8A 8SOIC |
SI4834CDY-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
SI4834CDY-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V 8A 8SOIC | 225 More on Order |
|
SI4834CDY-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 30V 8A 8SOIC | 354 More on Order |
URL Link
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8A Rds On (Max) @ Id, Vgs 20mOhm @ 8A, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 950pF @ 15V Power - Max 2.9W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8A Rds On (Max) @ Id, Vgs 20mOhm @ 8A, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 950pF @ 15V Power - Max 2.9W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |