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Datasheet | SI4946BEY-T1-GE3 |
File Size | 189.68 KB |
Total Pages | 9 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | SI4946BEY-T1-GE3, SI4946BEY-T1-E3 |
Description | MOSFET 2N-CH 60V 6.5A 8-SOIC, MOSFET 2N-CH 60V 6.5A 8-SOIC |
SI4946BEY-T1-GE3 - Vishay Siliconix
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URL Link
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 6.5A Rds On (Max) @ Id, Vgs 41mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 840pF @ 30V Power - Max 3.7W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 6.5A Rds On (Max) @ Id, Vgs 41mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 840pF @ 30V Power - Max 3.7W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |