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| Datasheet | SI5459DU-T1-GE3 |
| File Size | 186.02 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI5459DU-T1-GE3 |
| Description | MOSFET P-CH 20V 8A CHIPFET |
SI5459DU-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SI5459DU-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 52mOhm @ 6.7A, 4.5V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 665pF @ 10V FET Feature - Power Dissipation (Max) 3.5W (Ta), 10.9W (Tc) Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® ChipFet Single Package / Case PowerPAK® ChipFET™ Single |