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| Datasheet | SI5482DU-T1-GE3 |
| File Size | 96.28 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI5482DU-T1-GE3, SI5482DU-T1-E3 |
| Description | MOSFET N-CH 30V 12A PPAK CHIPFET, MOSFET N-CH 30V 12A PPAK CHIPFET |
SI5482DU-T1-GE3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 15mOhm @ 7.4A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1610pF @ 15V FET Feature - Power Dissipation (Max) 3.1W (Ta), 31W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® ChipFet Single Package / Case PowerPAK® ChipFET™ Single |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 15mOhm @ 7.4A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1610pF @ 15V FET Feature - Power Dissipation (Max) 3.1W (Ta), 31W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® ChipFet Single Package / Case PowerPAK® ChipFET™ Single |