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| Datasheet | SI5853CDC-T1-E3 |
| File Size | 130.81 KB |
| Total Pages | 10 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI5853CDC-T1-E3 |
| Description | MOSFET P-CH 20V 4A 1206-8 |
SI5853CDC-T1-E3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SI5853CDC-T1-E3
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Manufacturer Vishay Siliconix Series LITTLE FOOT® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 104mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 350pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.5W (Ta), 3.1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 1206-8 ChipFET™ Package / Case 8-SMD, Flat Lead |