Datasheet | SI5920DC-T1-GE3 |
File Size | 107.93 KB |
Total Pages | 7 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | SI5920DC-T1-GE3, SI5920DC-T1-E3 |
Description | MOSFET 2N-CH 8V 4A 1206-8, MOSFET 2N-CH 8V 4A 1206-8 |
SI5920DC-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
SI5920DC-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 8V 4A 1206-8 | 239 More on Order |
|
SI5920DC-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 8V 4A 1206-8 | 191 More on Order |
URL Link
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 4A Rds On (Max) @ Id, Vgs 32mOhm @ 6.8A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 680pF @ 4V Power - Max 3.12W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package 1206-8 ChipFET™ |
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 4A Rds On (Max) @ Id, Vgs 32mOhm @ 6.8A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 680pF @ 4V Power - Max 3.12W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package 1206-8 ChipFET™ |