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| Datasheet | SI5922DU-T1-GE3 |
| File Size | 169.54 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI5922DU-T1-GE3 |
| Description | MOSFET 2 N-CH 30V 6A POWERPAK |
SI5922DU-T1-GE3 - Vishay Siliconix
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SI5922DU-T1-GE3 | Vishay Siliconix | MOSFET 2 N-CH 30V 6A POWERPAK | 216 More on Order |
URL Link
www.oemstron.com/datasheet/SI5922DU-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Rds On (Max) @ Id, Vgs 19.2mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 765pF @ 15V Power - Max 10.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® ChipFET™ Dual Supplier Device Package PowerPAK® ChipFet Dual |