Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI6973DQ-T1-GE3 |
| File Size | 100.42 KB |
| Total Pages | 5 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI6973DQ-T1-GE3, SI6973DQ-T1-E3 |
| Description | MOSFET 2P-CH 20V 4.1A 8TSSOP, MOSFET 2P-CH 20V 4.1A 8TSSOP |
SI6973DQ-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI6973DQ-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 20V 4.1A 8TSSOP | 427 More on Order |
 |
SI6973DQ-T1-E3 | Vishay Siliconix | MOSFET 2P-CH 20V 4.1A 8TSSOP | 141 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.1A Rds On (Max) @ Id, Vgs 30mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 830mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package 8-TSSOP |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.1A Rds On (Max) @ Id, Vgs 30mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 830mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package 8-TSSOP |