Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI7446BDP-T1-GE3 |
| File Size | 108.04 KB |
| Total Pages | 6 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI7446BDP-T1-GE3, SI7446BDP-T1-E3 |
| Description | MOSFET N-CH 30V 12A PPAK SO-8, MOSFET N-CH 30V 12A PPAK SO-8 |
SI7446BDP-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI7446BDP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 12A PPAK SO-8 | 114 More on Order |
 |
SI7446BDP-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 12A PPAK SO-8 | 239 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7.5mOhm @ 19A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3076pF @ 15V FET Feature - Power Dissipation (Max) 1.9W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7.5mOhm @ 19A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3076pF @ 15V FET Feature - Power Dissipation (Max) 1.9W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |