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SI7972DP-T1-GE3 Datasheet

SI7972DP-T1-GE3 Cover
DatasheetSI7972DP-T1-GE3
File Size173.52 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI7972DP-T1-GE3
Description MOSFET 2 N-CH 30V POWERPAK SO8

SI7972DP-T1-GE3 - Vishay Siliconix

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SI7972DP-T1-GE3 SI7972DP-T1-GE3 Vishay Siliconix MOSFET 2 N-CH 30V POWERPAK SO8 15716

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URL Link

SI7972DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Rds On (Max) @ Id, Vgs

18mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1050pF @ 30V

Power - Max

22W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual