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| Datasheet | SI8481DB-T1-E1 |
| File Size | 154.3 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI8481DB-T1-E1 |
| Description | MOSFET P-CH 20V 9.7A 4-MICROFOOT |
SI8481DB-T1-E1 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SI8481DB-T1-E1
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Manufacturer Vishay Siliconix Series TrenchFET® Gen III FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 21mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 47nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 10V FET Feature - Power Dissipation (Max) 2.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-MICRO FOOT® (1.6x1.6) Package / Case 4-UFBGA |